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JASE ›› 2017, Vol. 08 ›› Issue (01): 79-86.DOI: 10.3969/j.issn.1674-8484.2017.01.010

• 汽车节能与环保 • 上一篇    下一篇

基于SiC 和Si 器件的燃料电池汽车DC-DC 变换器的性能

周晓敏1,马后成1,高大威2   

  1. 1. 北京科技大学 机械工程学院,北京 100083;2. 清华大学 汽车安全与节能国家重点实验室,北京 100084
  • 收稿日期:2016-08-29 出版日期:2017-03-23 发布日期:2017-03-23
  • 作者简介:周晓敏(1975—),女( 汉),北京,副教授,E-mail: zhouxiaomin@ustb.edu.cn
  • 基金资助:

    国家科技支掌计划项目(2015BAG06B01);汽车安全与节能国家重点实验室开放基金(KF14132)

Performances of DC-DC converter for fuel cell vehicle based on SiC and Si device

ZHOU Xiaomin1, MA Houcheng1, GAO Dawei2   

  1. 1. School of Mechanical and Engineering, University of Science and Technology Beijing, Beijing 100083, China;
    2. State Key Laboratory of Automotive Safety and Energy, Tsinghua University, Beijing 100084, China
  • Received:2016-08-29 Online:2017-03-23 Published:2017-03-23

摘要:

为实现燃料电池汽车输出电压、功率的调节与控制,采用了一种交错式双Boost 电路的大功率直流-直流(DC-DC) 变换器,其中应用了Si 和SiC 功率器件。基于电路损耗计算和效率仿真手段,对比分析了全SiC [ 金属-氧化物半导体场效应晶体管(MOSFET) 器件、SiC 二极管]、SiCMOSFET 和Si 二极管的混合器件和全硅Si [ 绝缘栅双极型晶体管(IGBT) 器件、Si 二极管] 的变换器在电路损耗。结果表明:Si IGBT 的开通和关断损耗约是SiC MOSFET 的3 倍和10 倍,在不同工况下,全SiC 变换器的转换效率比全Si 变换器高1%~3.1%。因而,SiC 功率器件在大功率DC-DC变换器的应用中,能够提高功率密度、可靠性和动力系统工作效率。

关键词: 燃料电池汽车, 直流-直流(DC-DC) 变换器, 交错式双Boost 电路, SiC 金属-氧化物半导体场效应晶体管(MOSFET) , Si 绝缘栅双极型晶体管(IGBT) , 电路损耗

Abstract:

The performances in circuit loss of an interleaved dual Boost high power derect-curent to derectcurent (DC-DC) converters were analyzed by using Si devices or/and SiC devices in a fuel cell vehicle to regulate and control the output voltage and output power. The circuit losses and efficiency in the whole SiC devices (i.e. SiC Metal-Oxide-Semiconductor Field-Effect Transistor, MSOFET and SiC diode) converter, hybrid devices (i.e. SiC MOSFET and Si diode) converter and the whole Si devices (i.e. Si Insulated Gate Bipolar Transistor, IGBT and Si diode) converter were compared base on circuit loss numerical calculation and efficiency simulation. The results show that the Si IGBT losses are 3 times for switching on and 10 times for switching off as that of SiC MOSFET and the efficiencies of All-SiC devices are 1%~3.1% higher than All-Si devices in different conditions. Therefore, the SiC devices can improve the power density, reliability and efficiency of the power system for high power DC-DC converters.

Key words: fuel cell vehicles, DC-DC converter, interleaved dual Boost circuit, SiC MOSFET (metal-oxidesemiconductor field-effect transistor), Si IGBT (insulated gate bipolar transistor), circuit loss